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BCP52 Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer BCP52
Bauteilbeschribung  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BCP52 Datenblatt(HTML) 1 Page - Continental Device India Limited

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BCP51 BCP52 BCP53
SOT-223
Formed SMD Package
General Purpose Medium Power DC Applications
Complementary BCP54 BCP55 and BCP56
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BCP51
BCP52
Collector Base Voltage
VCBO
45
60
100
Collector Emitter Voltage
VCEO
45
60
80
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current Peak
ICM
Base Current Peak
IBM
Power Dissipation upto Tamb=25ºC
*PD
Storage Temperature
Tstg
Junction Temperature
Tj
Operating Ambient Temperature
Tamb
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
From junction to soldering point
Rth (j-a)
* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2.
ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Cut Off Current
ICBO
VCB=30V, IE=0
100
nA
VCB=30V, IE=0, Tj=125ºC
10
µA
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
100
nA
DC Current Gain
hFE
IC=5mA, VCE=2V
63
IC=150mA, VCE=2V
63
250
IC=500mA, VCE=2V
40
DC Current Gain
hFE
IC=150mA, VCE=2V
Group -10
63
160
Group -16
100
250
Collector Emitter Saturation Voltage
VCE (sat)
IC=0.5A, IB=50mA
0.5
V
Base Emitter On Voltage
VBE (on)
IC=0.5A, VCE=2V
1.0
V
Transition Frequency
fT
IC=10mA, VCE=5V,f=100MHz
115
MHz
BCP51_53Rev011104E
- 65 to +150
ºC
95
14
K/W
K/W
W
ºC
ºC
150
0.2
1.3
- 65 to +150
UNITS
V
V
V
A
A
A
BCP53
5.0
1.0
1.5
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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