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FQD13N06 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD13N06
Bauteilbeschribung  N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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Package Marking and Ordering Information
©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
www.fairchildsemi.com
2
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQD13N06
FQD13N06TM
DPAK
330 mm
16 mm
2500 units
Packing Method
Tape and Reel
Electrical Characteristics T
C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to
25°C
--
0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 5.0 A
--
0.11
0.14
gFS
Forward Transconductance
VDS = 25 V, ID = 5.0 A
--
4.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
240
310
pF
Coss
Output Capacitance
--
90
120
pF
Crss
Reverse Transfer Capacitance
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 30 V, ID = 6.5 A,
RG = 25 Ω
--
5
20
ns
tr
Turn-On Rise Time
--
25
60
ns
td(off)
Turn-Off Delay Time
--
8
25
ns
tf
Turn-Off Fall Time
--
15
40
ns
Qg
Total Gate Charge
VDS = 48 V, ID = 13 A,
VGS = 10 V
--
5.8
7.5
nC
Qgs
Gate-Source Charge
--
2.0
--
nC
Qgd
Gate-Drain Charge
--
2.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 10 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 13 A,
dIF / dt = 100 A/µs
--
39
--
ns
Qrr
Reverse Recovery Charge
--
40
--
nC
(Note 4)
(Note 4)
Notes:
Repetitive rating : pulse-width limited by maximum junction temperature.
L = 990
µH, IAS = 10 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 13 A, di/dt ≤ 300 A/us, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
1.
2.


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