Datenblatt-Suchmaschine für elektronische Bauteile |
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P0080SB Datenblatt(PDF) 3 Page - StarHope |
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P0080SB Datenblatt(HTML) 3 Page - StarHope |
3 / 3 page The Basic Characteristic of the P The principle introduction Operation In the standby mode, P devices exhibit a high off-state impedance, eliminating excessive leakage currents and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching voltage (VS), P devices crowbar and simulate a short circuit condition until the current flowing through the device is either interrupted or drops below the P device’s holding current (I H). Once this occurs, P devices reset and return to their high off-state impedance. Figure1 V-I Characteristics Figure2 tr x td Pulse Wave-form Figure3 Normalized VS Change versus Junction Temperature Figure4 Normalized DC Holding Current Thyristor/SMB Series REV.2014.05.01 03 | www.spsemi.cn |
Ähnliche Teilenummer - P0080SB |
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Ähnliche Beschreibung - P0080SB |
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