Datenblatt-Suchmaschine für elektronische Bauteile |
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BU205 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BU205 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU205 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 2 COB Output capacitance IE=0; VCB=10V;f=1MHz 65 pF fT Transition frequency IC=0.1A ; VCE=15V 7.5 MHz tf Fall time IC=2A ;IB=1A LB=10µH 0.75 µs |
Ähnliche Teilenummer - BU205 |
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Ähnliche Beschreibung - BU205 |
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