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BC547 Datenblatt(PDF) 2 Page - General Semiconductor

Teilenummer BC547
Bauteilbeschribung  Small Signal Transistors (NPN)
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Hersteller  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
1.6
3.2
6
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
k
k
k
µS
µS
µS
DC Current Gain
at VCE = 5 V, IC = 10µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
at VCE = 5 V, IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
110
200
420
90
150
270
180
290
500
120
200
400
220
450
800
Thermal Resistance Junction to Ambient Air
RthJA
2501)
K/W
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
80
200
200
600
mV
mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
700
900
mV
mV
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
VBE
VBE
580
660
700
720
mV
mV
Collector-Emitter Cutoff Current
at VCE = 80 V
BC546
at VCE = 50 V
BC547
at VCE = 30 V
BC548, BC549
at VCE = 80 V, Tj = 125 °C
BC546
at VCE = 50 V, Tj = 125 °C
BC547
ICES
ICES
ICES
ICES
ICES
0.2
0.2
0.2
15
15
15
4
4
nA
nA
nA
µA
µA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549


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