Datenblatt-Suchmaschine für elektronische Bauteile |
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3SK134B Datenblatt(PDF) 2 Page - NEC |
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3SK134B Datenblatt(HTML) 2 Page - NEC |
2 / 5 page 3SK134B 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source Breakdown Voltage BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA Drain Current IDSX 0.4 8.0 mA VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA Gate2 to Source Cutoff Voltage VG2SS(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V Forward Transfer Admittance |yfs| 25.0 29.0 35.0 mS VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 1.5 2.5 3.5 pF VDS = 10 V, VG2S = 4 V, ID = 10 mA Output Capacitance Coss 0.6 1.1 1.6 pF f = 1 MHz Reverse Transfer Capacitance Crss 0.02 0.03 pF Power Gain Gps 20.0 23.0 dB VDS = 10 V, VG2S = 4 V, ID = 10 mA Noise Figure NF 2.4 3.5 dB f = 900 MHz IDSX Classification Rank U55/UEE U56/UEF Marking U55 U56 IDSX (mA) 0.4 to 5.0 3.0 to 8.0 |
Ähnliche Teilenummer - 3SK134B |
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Ähnliche Beschreibung - 3SK134B |
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