FQD13N06TF datasheet(3/8 Pages) FAIRCHILD

Teilenummer	FQD13N06TF

Bauteilbeschribung	N-Channel QFET MOSFET 60 V, 10 A, 140 m

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FQD13N06 Rev. C1

www.fairchildsemi.com

3

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

010

20

30

40

0

100

200

300

400

500

V

GS = 20V

V

GS = 10V

※

Note : T

J = 25

℃

I

D, Drain Current [A]

10

-1

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

※

Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

10

V

DS, Drain-Source Voltage [V]

1

0

2233

7

6

0

2

4

6

8

10

12

V

DS = 30V

V

DS = 48V

※

Note : I

D = 13 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

500

600

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

4

2

8

10

-1

10

0

10

1

150℃

25℃

-55℃

※

Notes :

1. V

DS = 25V

2. 250μ s Pulse Test

6

V

GS, Gate-Source Voltage [V]

4

5

Ähnliche Beschreibung - FQD13N06TF

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