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2SD1135 Datenblatt(PDF) 1 Page - Hitachi Semiconductor |
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2SD1135 Datenblatt(HTML) 1 Page - Hitachi Semiconductor |
1 / 5 page 2SD1135 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 Outline 1. Base 2. Collector (Flange) 3. Emitter TO-220AB 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 100 V Collector to emitter voltage V CEO 80 V Emitter to base voltage V EBO 5V Collector current I C 4A Collector peak current I C(peak) 8A Collector power dissipation P C* 1 40 W Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. Value at T C = 25°C. |
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