2SD1135 datasheet(2/5 Pages) HITACHI

Teilenummer	2SD1135

Bauteilbeschribung	Silicon NPN Triple Diffused

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Hersteller	HITACHI [Hitachi Semiconductor]

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2SD1135

2

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

V

(BR)CEO

80

—

V

I

C = 50 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

5—

—

V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

—

0.1

mA

V

CB = 80 V, IE = 0

DC current transfer ratio

h

FE1*

1

60

—

200

V

CE = 5 V, IC = 1 A*

2

h

FE2

35

—

V

CE = 5 V, IC = 0.1 A*

2

Base to emitter voltage

V

BE

—

1.5

V

CE = 5 V, IC = 1 A*

2

Collector to emitter saturation

voltage

V

CE(sat)

—

2VI

C = 2 A, IB = 0.2 A*

2

Gain bandwidth product

f

T

—

10

—

MHz

V

CE = 5 V, IC = 0.5 A*

2

Collector output capacitance

Cob

—

40

—

pF

V

CB = 20 V, IE = 0, f = 1 MHz

Notes: 1. The 2SD1135 is grouped by h

FE1 as follows.

2. Pulse test.

BC

60 to 120

100 to 200

0

50

100

150

Case temperature TC (°C)

Maximum Collector Dissipation Curve

20

40

60

0.05

0.1

0.2

0.5

1.0

2

5

Collector to emitter voltage VCE (V)

1

2

5

10

20

50

100

Area of Safe Operation

IC max (Continuous)

(10 V, 4 A)

(33 V, 1.2 A)

(80 V, 0.06 A)

DC

Operation

(T

C =

25

°C)

Ähnliche Beschreibung - 2SD1135

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hitachi Semiconductor	2SC4692	44Kb / 5P	SILICON NPN TRIPLE DIFFUSED DIFFUSED
	2SD2300	32Kb / 5P	Silicon NPN Triple Diffused
	2SD1606	35Kb / 6P	Silicon NPN Triple Diffused
	2SD2107	32Kb / 6P	Silicon NPN Triple Diffused
	2SC1881	35Kb / 6P	Silicon NPN Triple Diffused
	2SC2611	30Kb / 6P	Silicon NPN Triple Diffused
	2SC4499	39Kb / 8P	Silicon NPN Triple Diffused
	2SC4797	20Kb / 4P	Silicon NPN Triple Diffused
	2SC3322	45Kb / 7P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SC1515	160Kb / 5P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SD1126	147Kb / 7P	Silicon NPN Triple Diffused

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