Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1298 Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SK1298 Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1298 6 500 200 100 50 20 10 5 0.5 1.0 5 50 Reverse Drain Current IDR (A) 10 2 20 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 10 010 20 50 Drain to Source Voltage VDS (V) 30 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 0 40 120 160 Gate Charge Qg (nc) 80 20 16 12 8 4 Dynamic Input Characteristics 200 0 VDS VGS VDD = 10 V 25 V ID = 40 A 50 V VDD = 10 V 25 V 50 V Switching Characteristics 1000 500 200 100 20 10 0.5 1.0 5 50 Drain Current ID (A) 10 2 20 50 td (off) tf VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % td (on) tr • • |
Ähnliche Teilenummer - 2SK1298 |
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Ähnliche Beschreibung - 2SK1298 |
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