Datenblatt-Suchmaschine für elektronische Bauteile |
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NE3210S01 Datenblatt(PDF) 2 Page - NEC |
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NE3210S01 Datenblatt(HTML) 2 Page - NEC |
2 / 16 page Data Sheet P14067EJ2V0DS00 2 NE3210S01 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = –3 V – 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 154070 mA Gate to Source Cut off Voltage VGS (off) VDS = 2 V, IDS = 100 µA –0.2 –0.7 –2.0 V Transconductance gm VDS = 2 V, IDS = 10 mA 40 55 – mS Noise Figure NF – 0.35 0.45 dB Associated Gain Ga VDS = 2 V, IDS = 10 mA f = 12 GHz 12.0 13.5 – dB |
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