Datenblatt-Suchmaschine für elektronische Bauteile |
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TP2540 Datenblatt(PDF) 2 Page - Supertex, Inc |
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TP2540 Datenblatt(HTML) 2 Page - Supertex, Inc |
2 / 6 page 2 TP2540 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Thermal Characteristics Package I D (continuous)† (mA) I D (pulsed) (A) Power Dissipation @ T A = 25 O C (W) θ jc O C/W θ ja O C/W I DR † (mA) I DRM (A) TO-92 -86 -0.6 0.74 125 170 -86 -0.6 TO-243AA (SOT-89) -125 -1.2 1.6‡ 15 78‡ -125 -1.2 † I D (continuous) is limited by max rated Tj . ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL Output D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT 0V VDD RGEN 0V -10V Sym Parameter Min Typ Max Units Conditions Electrical Characteristics (T A = 25°C unless otherwise specified) BV DSS Drain-to-source breakdown voltage -400 - - V V GS = 0V, ID = -2.0mA V GS(th) Gate threshold voltage -1.0 - -2.4 V V GS = VDS, ID= -1.0mA ∆V GS(th) Change in V GS(th) with temperature - - 4.8 mV/OC V GS = VDS, ID= -1.0mA I GSS Gate body leakage - - -100 nA V GS = ± 20V, VDS = 0V I DSS Zero gate voltage drain current - - -10 μA V GS = 0V, VDS = Max Rating - -1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125°C I D(ON) On-state drain current -0.2 -0.3 - A V GS = -4.5V, VDS = -25V -0.4 -1.1 - V GS = -10V, VDS = -25V R DS(ON) Static drain-to-source on-state resistance - 20 30 Ω V GS = -4.5V, ID = -100mA 19 25 V GS = -10V, ID = -100mA ∆R DS(ON) Change in R DS(ON) with temperature - - 0.75 %/OC V GS = -10V, ID = -100mA G FS Forward transconductance 100 175 - mmho V DS = -25V, ID = -100mA C ISS Input capacitance - 60 125 pF V GS = 0V, V DS = -25V, f = 1.0 MHz C OSS Common source output capacitance - 20 70 C RSS Reverse transfer capacitance - 10 25 t d(ON) Turn-on delay time - - 10 ns V DD = -25V, I D = -0.4A, R GEN = 25Ω t r Rise time - - 10 t d(OFF) Turn-off delay time - - 20 t f Fall time - - 13 V SD Diode forward voltage drop - - -1.8 V V GS = 0V, ISD = -100mA t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = -100mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. 1. 2. |
Ähnliche Teilenummer - TP2540 |
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Ähnliche Beschreibung - TP2540 |
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