Datenblatt-Suchmaschine für elektronische Bauteile |
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NE334S01-T1B Datenblatt(PDF) 2 Page - NEC |
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NE334S01-T1B Datenblatt(HTML) 2 Page - NEC |
2 / 12 page 2 NE334S01 ELECTRICAL CHARACTERISTICS (TA = 25 °°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Gate to Source Leak Current IGSO 0.5 10 mAVGS = -3 V Saturated Drain Current IDSS 20 80 150 mA VDS = 2 V, VGS = 0 V Gate to Source Cutoff Voltage VGS(off) -0.2 -0.9 -2.5 V VDS = 2 V, ID = 100 mA Transconductance gm 70 85 mS VDS = 2 V, ID = 14 mA Noise Figure NF 0.25 0.35 dB VDS = 2 V, ID = 15 mA, Associated Gain Ga 15.0 16.0 dB f = 4 GHz |
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