Datenblatt-Suchmaschine für elektronische Bauteile |
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PD20010-E Datenblatt(PDF) 4 Page - STMicroelectronics |
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PD20010-E Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics PD20010-E 4/13 Doc ID 15514 Rev 2 2 Electrical characteristics TCASE = + 25 °C 2.1 Static 2.2 Dynamic 2.3 ESD protection characteristics 2.4 Moisture sensitivity level Table 4. Static Symbol Test conditions Min. Typ. Max. Unit IDSS VGS = 0V VDS = 25 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 10 V ID = 150 mA 3.0 4.3 V VDS(ON) VGS = 10 V ID = 1 A 0.34 V CISS VGS = 0V VDS = 12.5 V f = 1 MHz 45 pF COSS VGS = 0V VDS = 12.5 V f = 1 MHz 36 pF CRSS VGS = 0V VDS = 12.5 V f = 1 MHz 1.2 pF Table 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P3dB VDD = 13.6 V, IDQ = 150 mA f = 2000 MHz 10 15 W GP VDD = 13.6 V, IDQ = 150 mA, POUT = 10 W, f = 2000 MHz 10 11 dB hD VDD = 13.6 V, IDQ = 150 mA, POUT = P3dB, f = 2000 MHz 45 53 % Load mismatch VDD = 15.5 V, IDQ = 300 mA, POUT = 10 W, f = 2000 MHz All phase angles 20:1 VSWR Table 6. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 Table 7. Moisture sensitivity level Test conditions Rating J-STD-020B MSL 3 |
Ähnliche Teilenummer - PD20010-E |
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Ähnliche Beschreibung - PD20010-E |
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