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PD20010-E Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer PD20010-E
Bauteilbeschribung  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Electrical characteristics
PD20010-E
4/13
Doc ID 15514 Rev 2
2
Electrical characteristics
TCASE = + 25 °C
2.1
Static
2.2
Dynamic
2.3
ESD protection characteristics
2.4
Moisture sensitivity level
Table 4.
Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
IDSS
VGS = 0V
VDS = 25 V
1
µA
IGSS
VGS = 5 V
VDS = 0 V
1
µA
VGS(Q)
VDS = 10 V
ID = 150 mA
3.0
4.3
V
VDS(ON)
VGS = 10 V
ID = 1 A
0.34
V
CISS
VGS = 0V
VDS = 12.5 V
f = 1 MHz
45
pF
COSS
VGS = 0V
VDS = 12.5 V
f = 1 MHz
36
pF
CRSS
VGS = 0V
VDS = 12.5 V
f = 1 MHz
1.2
pF
Table 5.
Dynamic
Symbol
Test conditions
Min.
Typ.
Max.
Unit
P3dB
VDD = 13.6 V, IDQ = 150 mA
f = 2000 MHz
10
15
W
GP
VDD = 13.6 V, IDQ = 150 mA, POUT = 10 W, f = 2000 MHz
10
11
dB
hD
VDD = 13.6 V, IDQ = 150 mA, POUT = P3dB, f = 2000 MHz
45
53
%
Load
mismatch
VDD = 15.5 V, IDQ = 300 mA, POUT = 10 W, f = 2000 MHz
All phase angles
20:1
VSWR
Table 6.
ESD protection characteristics
Test conditions
Class
Human body model
2
Machine model
M3
Table 7.
Moisture sensitivity level
Test conditions
Rating
J-STD-020B
MSL 3


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