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SI1302DL Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1302DL Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 71249 S10-2140-Rev. F, 20-Sep-10 Vishay Siliconix Si1302DL Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1.5 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 0.6 A 0.410 0.480 VGS = 4.5 V, ID = 0.2 A 0.600 0.700 Forward Transconductancea gfs VGS = 15 V, ID = 0.6 A 0.75 S Diode Forward Voltagea VSD IS = 0.23 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 1.4 nC Gate-Source Charge Qgs 0.24 Gate-Drain Charge Qgd 0.08 Turn-On Delay Time td(on) VDD = 15 V, RL = 30 ID 0.5 A, VGEN = 10 V, Rg = 6 510 ns Rise Time tr 815 Turn-Off DelayTime td(off) 815 Fall Time tf 715 Source-Drain Reverse Recovery Time trr IF = 0.23 A, dI/dt = 100 A/µs 15 30 Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 10 V thru 4 V 3 V VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
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