Datenblatt-Suchmaschine für elektronische Bauteile |
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FDC5661N_F085 Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDC5661N_F085 Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDC5661N_F085 Rev. A www.fairchildsemi.com 3 Electrical Characteristics T A = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Notes: 1: Symbol Parameter Test Conditions Min Typ Max Units ton Turn-On Time VDD = 30V, ID = 4.3A VGS = 10V, RGS = 6Ω - - 17.6 ns td(on) Turn-On Delay Time - 7.2 - ns tr Rise Time - 1.6 - ns td(off) Turn-Off Delay Time - 19.3 - ns tf Fall Time - 3.1 - ns toff Turn-Off Time - - 36 ns VSD Source to Drain Diode Voltage ISD = 4.3A - 0.8 1.25 V ISD = 2.1A - 0.8 1.0 trr Reverse Recovery Time ISD = 4.3A, dISD/dt = 100A/μs - 18.4 24 ns Qrr Reverse Recovery Charge - 10.0 13 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
Ähnliche Teilenummer - FDC5661N_F085 |
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Ähnliche Beschreibung - FDC5661N_F085 |
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