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FDD770N15A Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FDD770N15A
Bauteilbeschribung  N-Channel PowerTrench짰 MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD770N15A Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD770N15A
FDD770N15A
DPAK
Tape and Reel
330 mm
16 mm
2500 units
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
150
-
-
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25oC
-
0.0824
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
-
-
1
μA
VDS = 120 V, VGS = 0 V, TC = 125oC
-
-
500
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA2.0
-
4.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 12 A
-
61
77
m
Ω
gFS
Forward Transconductance
VDS = 10 V, ID = 12 A
-20
-
S
Ciss
Input Capacitance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
-
575
765
pF
Coss
Output Capacitance
-
64
85
pF
Crss
Reverse Transfer Capacitance
-
3.9
6
pF
Coss(er)
Energy Related Output Capacitance
VDS = 75 V, VGS = 0 V
-
113
-
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 75 V, ID = 12 A,
VGS = 10 V
(Note 4)
-8.4
11
nC
Qgs
Gate to Source Gate Charge
-
2.7
-
nC
Qgd
Gate to Drain “Miller” Charge
-
1.8
-
nC
Vplateau
Gate Plateau Volatge
-
5.7
-
V
Qsync
Total Gate Charge Sync.
VDS = 0 V, ID = 6 A
-6.9
-
nC
Qoss
Output Charge
VDS = 37.5 V, VGS = 0 V
-
14
-
nC
ESR
Equivalent Series Resistance (G-S)
f = 1 MHz
-
0.5
-
Ω
td(on)
Turn-On Delay Time
VDD = 75 V, ID = 12 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
-10.3
30.6
ns
tr
Turn-On Rise Time
-
3.1
16.2
ns
td(off)
Turn-Off Delay Time
-
15.8
41.6
ns
tf
Turn-Off Fall Time
-
2.8
15.6
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
18
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
36
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
-
-
1.25
V
trr
Reverse Recovery Time
VGS = 0 V, VDD = 75 V, ISD = 12 A,
dIF/dt = 100 A/μs
-
56.4
-
ns
Qrr
Reverse Recovery Charge
-
109
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 4.6 A, starting TJ = 25°C.
3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.


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