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FDD770N15A Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDD770N15A Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD770N15A FDD770N15A DPAK Tape and Reel 330 mm 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC - 0.0824 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V - - 1 μA VDS = 120 V, VGS = 0 V, TC = 125oC - - 500 IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.0 - 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 61 77 m Ω gFS Forward Transconductance VDS = 10 V, ID = 12 A -20 - S Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz - 575 765 pF Coss Output Capacitance - 64 85 pF Crss Reverse Transfer Capacitance - 3.9 6 pF Coss(er) Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 113 - pF Qg(tot) Total Gate Charge at 10V VDS = 75 V, ID = 12 A, VGS = 10 V (Note 4) -8.4 11 nC Qgs Gate to Source Gate Charge - 2.7 - nC Qgd Gate to Drain “Miller” Charge - 1.8 - nC Vplateau Gate Plateau Volatge - 5.7 - V Qsync Total Gate Charge Sync. VDS = 0 V, ID = 6 A -6.9 - nC Qoss Output Charge VDS = 37.5 V, VGS = 0 V - 14 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.5 - Ω td(on) Turn-On Delay Time VDD = 75 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω (Note 4) -10.3 30.6 ns tr Turn-On Rise Time - 3.1 16.2 ns td(off) Turn-Off Delay Time - 15.8 41.6 ns tf Turn-Off Fall Time - 2.8 15.6 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.25 V trr Reverse Recovery Time VGS = 0 V, VDD = 75 V, ISD = 12 A, dIF/dt = 100 A/μs - 56.4 - ns Qrr Reverse Recovery Charge - 109 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 4.6 A, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
Ähnliche Teilenummer - FDD770N15A |
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Ähnliche Beschreibung - FDD770N15A |
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