FDD5N50FTM datasheet(3/8 Pages) FAIRCHILD

Teilenummer	FDD5N50FTM

Bauteilbeschribung	N-Channel MOSFET, FRFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 8 page

FDD5N50F Rev. A1

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.1

1

10

0.04

*Notes:

1. 250µs Pulse Test

2. TC = 25

oC

VGS = 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VDS,Drain-Source Voltage[V]

45

67

8

0.1

1

10

150

oC

*Notes:

1. VDS = 20V

2. 250µs Pulse Test

25

oC

VGS,Gate-Source Voltage[V]

20

0.00.4

0.81.2

1.6

1

10

0.2

*Notes:

1. V

GS = 0V

2. 250µs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

50

0

4

8

12

16

20

1.2

1.4

1.6

1.8

2.0

2.2

*Note: TJ = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.1

1

10

0

250

500

750

1000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

30

03

69

12

0

2

4

6

8

10

*Note: ID = 5A

VDS = 100V

VDS = 250V

VDS = 400V

Qg, Total Gate Charge [nC]

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