Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD5N50FTM Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDD5N50FTM Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDD5N50F Rev. A1 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area vs. Temperature Figure 9. Maximum Drain Current Figure 10. Transient Thermal Response Curve -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *Notes: 1. VGS = 0V 2. ID = 250µA TJ, Junction Temperature [ oC] 1 10 100 1000 0.01 0.1 1 10 30 40µs 100µs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse DC 25 50 75 100 125 150 0 1 2 3 4 TC, Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 0.003 0.01 0.1 0.2 0.05 0.02 *Notes: 1. ZθJC(t) = 1.4 oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] 3 t1 PDM t2 |
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Ähnliche Beschreibung - FDD5N50FTM |
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