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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4004 Datenblatt(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1N4004 Datenblatt(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Diodes Parameter Symbols M1 M2 M3 M4 M5 M6 M7 Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at TL =100 OC I(A) 1 A Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V Maximum DC Reverse Current TA = 25 OC at Rated DC Blocking Voltage TA = 125 OC IR 5 200 µA Typical Junction Capacitance 1) CJ 15 pF Maximum Thermal Resistance 2) RθJL 30 OC/W Operating and Storage Temperature Range TJ, TS - 50 to + 150 O C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 4.50 77 32 0 52 DO-214AC (SMA) 1.0 AMP. Surface Mount Rectifiers FEATURES For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 260 oC / 10 seconds at terminals High reliability grade (AEC Q101 qualified) MECHANICAL DATA Case: Molded plastic Terminals: Pure tin plated, lead free solderable per J-STD-002B and JESD22-B102D. Polarity: Indicated by cathode band Packaging: 12mm tapeper EIA STD RS-481 Weight: 0.064 gram M1---M7 1) Measured at 1MHz and applied reverse voltage of 4 V 2) 8 mm2 (0.013 mm thick) land areas MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ |
Ähnliche Teilenummer - 1N4004 |
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Ähnliche Beschreibung - 1N4004 |
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