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BUZ60 Datenblatt(PDF) 4 Page - Intersil Corporation

Teilenummer BUZ60
Bauteilbeschribung  5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

BUZ60 Datenblatt(HTML) 4 Page - Intersil Corporation

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FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
PULSE DURATION = 80
µs
VDS = 25V
TJ = 25
oC
10
5
0
05
10
VGS, GATE TO SOURCE VOLTAGE (V)
4
3
2
1
0
0
246
8
10
12
ID, DRAIN CURRENT (A)
VGS = 5V
5.5V
6V
6.5V
7V
7.5V
8V
9V
10V
20V
PULSE DURATION = 80
µs
-50
0
50
100
150
2.0
1.5
1.0
0.5
0
TJ, JUNCTION TEMPERATURE (
oC)
ID = 2.5A
VGS = 10V
PULSE DURATION = 80
µs
-50
0
50
100
150
4
3
2
1
0
TJ, JUNCTION TEMPERATURE (
oC)
VDS = VGS, ID = 1mA
0
102030
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
101
100
10-1
10-2
CISS
COSS
CRSS
CISS = CGS +CGD
CRSS = CGD
COSS = CDS +CGS
VGS = 0, f = 1MHz
5
4
3
2
1
0
05
10
ID, DRAIN CURRENT (A)
VDS = 25V
PULSE DURATION = 80
µs
TJ = 25
oC
BUZ60


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