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CA3146M96 Datenblatt(PDF) 2 Page - Intersil Corporation

Teilenummer CA3146M96
Bauteilbeschribung  High-Voltage Transistor Arrays
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CA3146M96 Datenblatt(HTML) 2 Page - Intersil Corporation

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Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (VCEO)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-to-Base Voltage (VCBO)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector-to-Substrate Voltage (VCIO, Note 1)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter to Base Voltage (VEBO) all types. . . . . . . . . . . . . . . . . . . . . 5V
Collector Current
CA3146A, CA3146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Base Current (IB) - CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
14 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
100
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
200
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
95
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation (Any One Transistor, Note 3)
CA3146A, CA3146. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
CA3183A, CA3183. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . .150oC
Maximum Storage Temperature Range (all types) . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more
negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid
undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass
capacitor can be used to establish a signal ground.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
CA3146 Series
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3146
CA3146A
UNITS
TA = 25
oC
MN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
-
40
72
-
50
72
-
V
Collector-to-Emitter
Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
-
30
56
-
40
56
-
V
Collector-to-Substrate
Breakdown Voltage
V(BR)CIO
ICI = 10µA, IB = 0,
IE = 0
-
40
72
-
50
72
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
-
5
7
-
5
7
-
V
Collector-Cutoff Current
ICEO
VCE = 10V, IB = 0
1
-
See
Curve
5
-
See
Curve
5
µA
Collector-Cutoff Current
ICBO
VCB = 10V, IE = 0
2
-
0.002
100
-
0.002
100
nA
DC Forward-Current Transfer
Ratio
hFE
VCE = 5V, IC = 10mA
3
-
85
-
-
85
-
-
VCE = 5V, IC = 1mA
3
30
100
-
30
100
-
-
VCE = 5V, IC = 10µA3
-
90
-
-
90
-
-
Base-to-Emitter Voltage
VBE
VCE = 3V, IC = 1mA
4
0.63
0.73
0.83
0.63
0.73
0.83
V
Collector-to-Emitter
Saturation Voltage
VCE SAT
IC = 10mA, IB = 1mA
5
-
0.33
-
-
0.33
-
V
DC CHARACTERISTICS FOR TRANSISTORS Q1 AND Q2 (As A Differential Amplifier)
Magnitude of Input Offset
Voltage |VBE1 - VBE2|
|VIO|VCE = 5V, IE = 1mA
6, 7
-
0.48
5
-
0.48
5
mV
Magnitude of Base-to-Emitter
Temperature Coefficient
VCE = 5V, IE = 1mA
-
-
1.9
-
-
1.9
-
mV/oC
∆V
BE
∆T
----------------
CA3146, CA3146A, CA3183, CA3183A


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