Datenblatt-Suchmaschine für elektronische Bauteile |
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CD4066BMS Datenblatt(PDF) 9 Page - Intersil Corporation |
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CD4066BMS Datenblatt(HTML) 9 Page - Intersil Corporation |
9 / 9 page 7-974 CD4066BMS FIGURE 16. TYPICAL ON CHARACTERISTICS FOR 1 OF 4 CHANNELS FIGURE 17. POWER DISSIPATION PER PACKAGE vs SWITCHING FREQUENCY Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). Typical Performance Characteristics (Continued) VC = VDD VDD VIS VOS RL VSS CD4066BMS 1 OF 4 SWITCHES ALL UNUSED TERMINALS ARE CONNECTED TO VSS AMBIENT TEMPERATURE (TA) = +25 oC VDD = 2.5V, VSS = -2.5V INPUT = TERM 1, OUTPUT = TERM 2 3 2 1 0 -1 -2 -3 -3 -2 -1 0 1 2 3 4 INPUT VOLTAGE (VI) (V) 100 Ω 100K RL = 100K 1K 10K 500 Ω 100 Ω 500 Ω 1K 10K CD4066/ 14 7 VDD VSS 13 12 6 5 BMS f 10V 5V 8 6 4 2 SWITCHING FREQUENCY (f) (kHz) 10 102 8 6 4 2 8 6 4 2 8 6 4 2 104 103 102 10 AMBIENT TEMPERATURE (TA) = +25 oC SUPPLY VOLTAGE (VDD) = 15V 8 6 4 2 103 Special Considerations In applications that employ separate power sources to drive VDD and the signal inputs, the VDD current capability should exceed VDD/RL (RL = effective external load of the four CD4066B bilateral switches). This provision avoids any permanent current flow or clamp action on the VDD supply when power is applied or removed from the CD4066B. In certain applications, the external load-resistor current may include both VDD and signal line components. To avoid drawing VDD current when switch current flows into termi- nals 1, 4, 8 or 11 the voltage drop across the bidirectional switch must not exceed 0.8 volts (calculated from RON val- ues shown). No VDD current will flow through RL if the switch current flows into terminals 2, 3, 9, or 10. METALLIZATION: Thickness: 11k Å − 14kÅ, AL. PASSIVATION: 10.4kÅ - 15.6k Å, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches |
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Ähnliche Beschreibung - CD4066BMS |
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