Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1253 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1253 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1253 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Complementary to 2SB930 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc = 25℃ 40 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 30 mA, IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 5 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 mA Collector cutoff current ICES VCB= 60 V , IE= 0 400 Collector cutoff current ICEO VCB= 30 V , IE= 0 700 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 mA Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=400mA 1.5 Base - emitter saturation voltage VBE(sat) IC=4 A, IB=400mA 1.2 Base - emitte voltage VBE VCE= 4V, IC= 3 A 2 hFE(1) VCE= 4V, IC= 1A 40 250 hFE(2) VCE= 4V, IC= 3A 15 Turn-on time ton 0.4 Storage time tstg 1.2 Fall time tf 0.5 Transition frequency fT VCE= 5V, IC= 500mA,f=10MHz 20 MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V us DC current gain V V uA ■ Classification of hfe(1) Type 2SD1253-R 2SD1253-Q 2SD1253-P Marking 40-90 70-150 120-250 |
Ähnliche Teilenummer - 2SD1253_15 |
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Ähnliche Beschreibung - 2SD1253_15 |
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