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KTA1666-O Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer KTA1666-O
Bauteilbeschribung  PNP Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KTA1666-O Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
KTA1666
Features
Small Flat Package
Low Saturation Voltage
Power Amplifier and Switching Application
Comlementary to KTC4379
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-50
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-2
A
Collector Power Dissipation
PC
500
mW
Thermal Resistance From Junction To Ambient
RθJA
250
/W
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -1 mA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -10 mA,IB=0
-50
Emitter - base breakdown voltage
VEBO
IE= -1 mA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -50V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-1 A, IB=-20mA (Note.1)
-0.5
Base - emitter saturation voltage
VBE(sat) IC=-1 A, IB=-20mA (Note.1)
-1.2
VCE= -2V, IC= -500mA
70
240
VCE= -2V, IC= -1.5A
40
Collector output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
40
pF
Transition frequency
fT
VCE= -2V, IC= -500mA
120
MHz
V
uA
V
DC current gain
hFE
Note.1: Pulse test: pulse width ≤300 uS, duty cycle≤ 2.0%.
Classification of hfe(1)
Type
KTA1666-O
KTA1666-Y
Range
70-140
120-240
Marking
WO
WY


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