Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

FSJ9160D Datenblatt(PDF) 2 Page - Intersil Corporation

Teilenummer FSJ9160D
Bauteilbeschribung  44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSJ9160D Datenblatt(HTML) 2 Page - Intersil Corporation

  FSJ9160D Datasheet HTML 1Page - Intersil Corporation FSJ9160D Datasheet HTML 2Page - Intersil Corporation FSJ9160D Datasheet HTML 3Page - Intersil Corporation FSJ9160D Datasheet HTML 4Page - Intersil Corporation FSJ9160D Datasheet HTML 5Page - Intersil Corporation FSJ9160D Datasheet HTML 6Page - Intersil Corporation FSJ9160D Datasheet HTML 7Page - Intersil Corporation FSJ9160D Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
3-228
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSJ9160D, FSJ9160R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
-100
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
44
A
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
28
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
132
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
192
W
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
77
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.54
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
132
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
44
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
132
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
-100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
-7.0
V
TC = 25
oC
-2.0
-
-6.0
V
TC = 125
oC
-1.0
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = -80V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = -12V, ID = 44A
-
-
-2.66
V
Drain to Source On Resistance
rDS(ON)12
ID = 28A,
VGS = -12V
TC = 25
oC
-
0.039
0.055
TC = 125
oC
-
-
0.092
Turn-On Delay Time
td(ON)
VDD = -50V, ID = 44A,
RL = 1.14Ω, VGS = -12V,
RGS = 2.35Ω
-
-
40
ns
Rise Time
tr
-
-
80
ns
Turn-Off Delay Time
td(OFF)
-
-
100
ns
Fall Time
tf
-
-
45
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to -20V
VDD = -50V,
ID = 44A
-
-
400
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to -12V
-
200
230
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
-
-
17
nC
Gate Charge Source
Qgs
-40
55
nC
Gate Charge Drain
Qgd
-74
98
nC
Plateau Voltage
V(PLATEAU) ID = 44A, VDS = -15V
-
-7
-
V
Input Capacitance
CISS
VDS = -25V, VGS = 0V,
f = 1MHz
-
5500
-
pF
Output Capacitance
COSS
-
1500
-
pF
Reverse Transfer Capacitance
CRSS
-
500
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.65
oC/W
Thermal Resistance Junction to Ambient
R
θJA
--
40
oC/W
FSJ9160D, FSJ9160R


Ähnliche Teilenummer - FSJ9160D

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Intersil Corporation
FSJ9055D INTERSIL-FSJ9055D Datasheet
66Kb / 8P
   55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSJ9055D1 INTERSIL-FSJ9055D1 Datasheet
66Kb / 8P
   55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSJ9055D3 INTERSIL-FSJ9055D3 Datasheet
66Kb / 8P
   55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSJ9055R INTERSIL-FSJ9055R Datasheet
66Kb / 8P
   55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSJ9055R1 INTERSIL-FSJ9055R1 Datasheet
66Kb / 8P
   55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
More results

Ähnliche Beschreibung - FSJ9160D

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Intersil Corporation
FSS9130D INTERSIL-FSS9130D Datasheet
44Kb / 8P
   6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSL913A0D INTERSIL-FSL913A0D Datasheet
57Kb / 8P
   7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1999
FSJ260D INTERSIL-FSJ260D Datasheet
46Kb / 8P
   44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL9110D INTERSIL-FSL9110D Datasheet
57Kb / 8P
   2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
October 1998
FSL9130D INTERSIL-FSL9130D Datasheet
45Kb / 8P
   5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSF9150D INTERSIL-FSF9150D Datasheet
45Kb / 8P
   22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSL130D INTERSIL-FSL130D Datasheet
45Kb / 8P
   8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSS130D INTERSIL-FSS130D Datasheet
45Kb / 8P
   11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSJ160D INTERSIL-FSJ160D Datasheet
60Kb / 9P
   70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL110D INTERSIL-FSL110D Datasheet
58Kb / 8P
   3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
October 1998
More results


Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com