Datenblatt-Suchmaschine für elektronische Bauteile |
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FSJ9160D Datenblatt(PDF) 2 Page - Intersil Corporation |
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FSJ9160D Datenblatt(HTML) 2 Page - Intersil Corporation |
2 / 8 page 3-228 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSJ9160D, FSJ9160R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V Continuous Drain Current TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 44 A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 28 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 132 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 192 W TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 77 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 132 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 44 A Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 132 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V -100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - -7.0 V TC = 25 oC -2.0 - -6.0 V TC = 125 oC -1.0 - - V Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC - - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 44A - - -2.66 V Drain to Source On Resistance rDS(ON)12 ID = 28A, VGS = -12V TC = 25 oC - 0.039 0.055 Ω TC = 125 oC - - 0.092 Ω Turn-On Delay Time td(ON) VDD = -50V, ID = 44A, RL = 1.14Ω, VGS = -12V, RGS = 2.35Ω - - 40 ns Rise Time tr - - 80 ns Turn-Off Delay Time td(OFF) - - 100 ns Fall Time tf - - 45 ns Total Gate Charge Qg(TOT) VGS = 0V to -20V VDD = -50V, ID = 44A - - 400 nC Gate Charge at 12V Qg(12) VGS = 0V to -12V - 200 230 nC Threshold Gate Charge Qg(TH) VGS = 0V to -2V - - 17 nC Gate Charge Source Qgs -40 55 nC Gate Charge Drain Qgd -74 98 nC Plateau Voltage V(PLATEAU) ID = 44A, VDS = -15V - -7 - V Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 5500 - pF Output Capacitance COSS - 1500 - pF Reverse Transfer Capacitance CRSS - 500 - pF Thermal Resistance Junction to Case R θJC - - 0.65 oC/W Thermal Resistance Junction to Ambient R θJA -- 40 oC/W FSJ9160D, FSJ9160R |
Ähnliche Teilenummer - FSJ9160D |
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Ähnliche Beschreibung - FSJ9160D |
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