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SI2300 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer SI2300
Bauteilbeschribung  N-Channel Enhancement Mode Field Effect Transistor
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2300 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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2
SMD Type
IC
SMD Type
MOSFET
Electrical Characteristics Ta = 25
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Drain-Source Breakdown Voltage
VDSS
VGS=0V,ID
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2
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=
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS
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Drain-Source Diode Forward Current *
IS
1.25
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1
=
* Pulse Test:Pulse Width 300 s,Duty Cycle 2%
VDS = 10V, ID = 3.5A,VGS = 4.5V
RDS(ON)
Drain- Source on-state Resistance *
VDD=10V,ID=1A,VGS=4.5V,RL=10
,RGEN=6
VDS = 15V, VGS = 0V,f =1.0MHZ
SI2300 (KI2300)
Marking
Marking
00A*


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