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IRF322 Datenblatt(PDF) 2 Page - Intersil Corporation

Teilenummer IRF322
Bauteilbeschribung  2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF322 Datenblatt(HTML) 2 Page - Intersil Corporation

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5-2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF320
IRF321
IRF322
IRF323
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
400
350
400
350
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
400
350
400
350
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
3.3
2.1
3.3
2.1
2.8
1.8
2.8
1.8
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
13
13
11
11
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
50
50
50
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
0.4
0.4
0.4
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
190
190
190
190
mJ
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V, (Figure 10)
IRF320, IRF322
400
-
-
V
IRF321, IRF323
350
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(Figure 7)
IRF320, IRF321
3.3
-
-
A
IRF322, IRF323
2.8
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 1.8A, VGS = 10V, (Figures 8, 9)
IRF320, IRF321
-
1.5
1.8
IRF322, IRF323
-
1.8
2.5
Forward Transconductance (Note 2)
gfs
VDS ≥ 10V, ID = 2.0A, (Figure 12)
1.7
2.7
-
S
Turn-On Delay Time
td(ON)
VDD = 200V, ID ≈ 3.3A, RG = 18Ω, RL = 60Ω,
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-10
15
ns
Rise Time
tr
-14
20
ns
Turn-Off Delay Time
td(OFF)
-30
45
ns
Fall Time
tf
-13
20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-12
20
nC
Gate to Source Charge
Qgs
-4
-
nC
Gate to Drain “Miller” Charge
Qgd
-8
-
nC
IRF320, IRF321, IRF322, IRF323


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