Datenblatt-Suchmaschine für elektronische Bauteile |
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FDC658AP Datenblatt(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDC658AP Datenblatt(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 4 page SMD Type www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics Figure 1. 0 5 10 15 20 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -3.5V -3.0V -4.5V -4.0V -5.0V -6.0V On-Region Characteristics Figure 2. 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 12 16 20 -ID, DRAIN CURRENT (A) VGS = -4.5V -6.0V -5.0V -8.0V -7.0V -10V Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -4.0A VGS = -10V Normalized On-Resistance vs Junction Temperature Figure 4. 0.02 0.06 0.1 0.14 0.18 0.22 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -2.0A TJ = 125oC TJ = 25oC On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 0 3 6 9 12 15 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55oC 25oC 125oC VDS = -5V Figure 6. 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TJ = 125oC 25oC -55oC Source to Drain Diode Forward Voltage vs Source Current P-Channel MOSFET FDC658AP (KDC658AP) |
Ähnliche Teilenummer - FDC658AP |
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Ähnliche Beschreibung - FDC658AP |
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