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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF1010E Datenblatt(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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IRF1010E Datenblatt(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 8 page  Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - RG VDD • dv/dt controlled by R G • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T * Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 14. For N-channel HEXFET® power MOSFETs IRF1010E 2014-8-12 7 www.kersemi.com |
Ähnliche Teilenummer - IRF1010E |
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Ähnliche Beschreibung - IRF1010E |
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