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IRLR3110Z Datenblatt(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Teilenummer IRLR3110Z
Bauteilbeschribung  Advanced Process Technology
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Hersteller  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRLR3110Z Datenblatt(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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AUIRLR3110Z
AUIRLU3110Z
S
D
G
D-Pak
AUIRLR3110Z
Specifically designed for Automotive applications, thi
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I-Pak
AUIRLU3110Z
VDSS
100V
RDS(on) typ.
11m
Ω
max.
14m
Ω
ID (Silicon Limited)
63Ak
ID (Package Limited)
42A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
d
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.05
RθJA
Junction-to-Ambient (PCB mount)
i
–––
40
°C/W
RθJA
Junction-to-Ambient
–––
110
A
mJ
-55 to + 175
300
10 lbf
yin (1.1Nym)
140
0.95
±16
140
110
See Fig.12a, 12b, 15, 16
Max.
63
k
45
k
250
42
www.kersemi.com
1
2014-8-24


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