Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLR3110Z Datenblatt(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRLR3110Z Datenblatt(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 13 page AUIRLR3110Z AUIRLU3110Z S D G D-Pak AUIRLR3110Z Specifically designed for Automotive applications, thi Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Description Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. I-Pak AUIRLU3110Z VDSS 100V RDS(on) typ. 11m Ω max. 14m Ω ID (Silicon Limited) 63Ak ID (Package Limited) 42A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Reflow Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.05 RθJA Junction-to-Ambient (PCB mount) i ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 A mJ -55 to + 175 300 10 lbf yin (1.1Nym) 140 0.95 ±16 140 110 See Fig.12a, 12b, 15, 16 Max. 63 k 45 k 250 42 www.kersemi.com 1 2014-8-24 |
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