Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLU8256PBF Datenblatt(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRLU8256PBF Datenblatt(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
4 / 11 page Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0123456789 10 11 12 13 QG, Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 VDS= 20V VDS= 13V ID= 20A 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 TJ = 25°C TJ = 175°C VGS = 0V 0 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) Tc = 25°C Tj = 175°C Single Pulse 100µsec 1msec 10msec IRLR8256PBF IRLU8256PBF 2014-8-25 4 www.kersemi.com |
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