Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

NE3510M04-T2 Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer NE3510M04-T2
Bauteilbeschribung  L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3510M04-T2 Datenblatt(HTML) 3 Page - Renesas Technology Corp

  NE3510M04-T2 Datasheet HTML 1Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 2Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 3Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 4Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 5Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 6Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 7Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 8Page - Renesas Technology Corp NE3510M04-T2 Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10676EJ02V0DS (2nd edition)
Date Published October 2008 NS
Printed in Japan
2007, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA
NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3510M04
NE3510M04-A
50 pcs (Non reel)
V81
NE3510M04-T2
NE3510M04-T2-A
3 kpcs/reel
NE3510M04-T2B NE3510M04-T2B-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
15 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
140
μA
Total Power Dissipation
Ptot
Note
125
mW
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
<R>


Ähnliche Teilenummer - NE3510M04-T2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
California Eastern Labs
NE3510M04-T2 CEL-NE3510M04-T2 Datasheet
180Kb / 11P
   HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04-T2-A CEL-NE3510M04-T2-A Datasheet
180Kb / 11P
   HETERO JUNCTION FIELD EFFECT TRANSISTOR
More results

Ähnliche Beschreibung - NE3510M04-T2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
California Eastern Labs
NE3509M04 CEL-NE3509M04_06 Datasheet
284Kb / 9P
   L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
logo
NEC
NE34018 NEC-NE34018 Datasheet
114Kb / 16P
   L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
logo
Renesas Technology Corp
NE3508M04 RENESAS-NE3508M04 Datasheet
213Kb / 12P
   L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
logo
California Eastern Labs
NE3509M04 CEL-NE3509M04 Datasheet
1Mb / 11P
   L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
logo
Renesas Technology Corp
NE3509M04 RENESAS-NE3509M04 Datasheet
217Kb / 12P
   L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
logo
NEC
NE38018 NEC-NE38018 Datasheet
94Kb / 16P
   L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
logo
Renesas Technology Corp
NE3509M14 RENESAS-NE3509M14_15 Datasheet
219Kb / 12P
   N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
NE3509M14 RENESAS-NE3509M14 Datasheet
208Kb / 12P
   N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
NE3519M04 RENESAS-NE3519M04 Datasheet
226Kb / 13P
   N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
logo
NEC
NE33284A NEC-NE33284A Datasheet
62Kb / 10P
   L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com