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NE3503M04 Datenblatt(PDF) 5 Page - Renesas Technology Corp

Teilenummer NE3503M04
Bauteilbeschribung  C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3503M04 Datenblatt(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PG10456EJ03V0DS
3
NE3503M04
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Ambient Temperature TA (
°C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
125
100
50
0
50
100 125 150
200
250
80
60
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
1.6
1.0
1.2
1.4
0.8
0.6
0.2
0.4
0.0
16
10
12
14
8
6
2
4
0
10
15
0
5
20
25
30
Drain Current ID (mA)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 12 GHz
VDS = 2 V
NFmin
Ga
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
25
15
10
5
20
0
68
24
10
012
14
16
18 20
Frequency f (GHz)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
VDS = 2 V
ID = 10 mA
NFmin
Ga
Drain to Source Voltage VDS (V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
100
20
40
60
80
0
1.0
2.0
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
Remark The graphs indicate nominal characteristics.


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