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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ST303C Datenblatt(PDF) 8 Page - International Rectifier |
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ST303C Datenblatt(HTML) 8 Page - International Rectifier |
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8 / 10 page  ST303C..L Series V TM Max. peak on-state voltage 2.16 I TM = 1255A, T J = T J max, t p = 10ms sine wave pulse V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward slope resistance r t2 High level value of forward slope resistance I H Maximum holding current 600 T J = 25°C, I T > 30A I L Typical atching current 1000 T J = 25°C, V A = 12V, Ra = 6 Ω, I G = 1A Parameter ST303C..L Units Conditions On-state Conduction 1.44 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 1.48 (I > π x I T(AV) ), T J = T J max. V 0.57 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 0.56 (I > π x I T(AV) ), T J = T J max. m Ω mA di/dt Max. non-repetitive rate of rise T J = T J max, V DRM = rated V DRM of turned-on current I TM = 2 x di/dt T J= 25°C, V DM = rated V DRM , I TM = 50A DC, t p = 1µs Resistive load Gate pulse: 10V, 5 Ω source T J = T J max, I TM = 550A, commutating di/dt = 40A/µs V R = 50V, t p = 500µs, dv/dt: see table in device code Switching Parameter ST303C..L Units Conditions 1000 A/µs t d Typical delay time 0.83 Min Max dv/dt Maximum critical rate of rise of T J = T J max. linear to 80% V DRM , higher value off-state voltage available on request I RRM Max. peak reverse and off-state I DRM leakage current Parameter ST303C..L Units Conditions Blocking 500 V/ µs 50 mA T J = T J max, rated V DRM /V RRM applied P GM Maximum peak gate power 60 P G(AV) Maximum average gate power 10 I GM Max. peak positive gate current 10 A T J = T J max, t p ≤ 5ms +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage I GT Max. DC gate current required to trigger V GT Max. DC gate voltage required to trigger I GD Max. DC gate current not to trigger 20 mA V GD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST303C..L Units Conditions 20 5 V T J = T J max, t p ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6 Ω T J = T J max, rated V DRM applied µs (*) t q = 10 to 20µs for 400 to 800V devices; t q = 15 to 30µs for 1000 to 1200V devices. 10 30 W T J = T J max, f = 50Hz, d% = 50 t q Max. turn-off time (*) To Order Next Data Sheet Index Previous Datasheet |
Ähnliche Teilenummer - ST303C |
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Ähnliche Beschreibung - ST303C |
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