2SC2335_15 datasheet(4/8 Pages) RENESAS

Teilenummer	2SC2335

Bauteilbeschribung	SILICON POWER TRANSISTO

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Data Sheet D14861EJ2V0DS

2

2SC2335

ELECTRICAL CHARACTERISTICS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC = 3.0 A, IB1 = 0.6 A, L = 1 mH

400

V

Collector to emitter voltage

VCEX(SUS)1

IC = 3.0 A, IB1 =

−IB2 = 0.6 A,

VBE(OFF) =

−5.0 V, L = 180

µH, clamped

450

V

Collector to emitter voltage

VCEX(SUS)2

IC = 6.0 A, IB1 = 2.0 A,

−IB2 = 0.6 A,

VBE(OFF) =

−5.0 V, L = 180

µH, clamped

400

V

Collector cutoff current

ICBO

VCB = 400 V, IE = 0 A

10

µA

Collector cutoff current

ICER

VCE = 400 V, RBE = 51

Ω, TA = 125°C

1.0

mA

Collector cutoff current

ICEX1

VCE = 400 V, VBE(OFF) =

−1.5 V

10

µA

Collector cutoff current

ICEX2

VCE = 400 V, VBE(OFF) =

−1.5 V,

TA = 125

°C

1.0

mA

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 0 A

10

µA

DC current gain

hFE1

VCE = 5.0 V, IC = 0.1 A

Note

20

80

DC current gain

hFE2

VCE = 5.0 V, IC = 1.0 A

Note

20

80

DC current gain

hFE3

VCE = 5.0 V, IC = 3.0 A

Note

10

Collector saturation voltage

VCE(sat)

IC = 3.0 A, IB = 0.6 A

Note

1.0

V

Base saturation voltage

VBE(sat)

IC = 3.0 A, IB = 0.6 A

Note

1.2

V

Turn-on time

ton

1.0

µs

Storage time

tstg

2.5

µs

Fall time

tf

IC = 3.0 A, RL = 50

Ω,

IB1 =

−IB2 = 0.6 A, VCC ≅ 150 V

Refer to the test circuit.

1.0

µs

Note Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

M

L

K

hFE2

20 to 40

30 to 60

40 to 80

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current

waveform

Collector current

waveform

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