Datenblatt-Suchmaschine für elektronische Bauteile |
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BAT82S Datenblatt(PDF) 1 Page - Vishay Siliconix |
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BAT82S Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAT81S, BAT82S, BAT83S www.vishay.com Vishay Semiconductors Rev. 1.9, 06-May-13 1 Document Number: 85512 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Integrated protection ring against static discharge •Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and switching Schottky barrier diode • HF-detector • Protection circuit • Diode for low currents with a low supply voltage • Small battery charger • Power supplies • DC/DC converter for notebooks PARTS TABLE PART TYPE DIFFERENTATION ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAT81S VR = 40 V BAT81S-TR or BAT81S-TAP Single diode BAT81S Tape and reel/ammopack BAT82S VR = 50 V BAT82S-TR or BAT82S-TAP Single diode BAT82S Tape and reel/ammopack BAT83S VR = 60 V BAT83S-TR or BAT83S-TAP Single diode BAT83S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage BAT81S VR 40 V BAT82S VR 50 V BAT83S VR 60 V Forward continuous current IF 30 mA Peak forward surge current tp 10 ms IFSM 500 mA Repetitive peak forward current tp 1 s IFRM 150 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 320 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 0.1 mA VF 330 mV IF = 1 mA VF 410 mV IF = 15 mA VF 1000 mV Reverse current VR = VRmax. IR 200 nA Diode capacitance VR = 1 V, f = 1 MHz CD 1.6 pF |
Ähnliche Teilenummer - BAT82S |
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Ähnliche Beschreibung - BAT82S |
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