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SMB1W-850D Datenblatt(PDF) 1 Page - Roithner LaserTechnik GmbH

Teilenummer SMB1W-850D
Bauteilbeschribung  High Power LED
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Hersteller  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1W-850D Datenblatt(HTML) 1 Page - Roithner LaserTechnik GmbH

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13.05.2011
SMB1W-850D
1 of 2
SMB1W-850D
TECHNICAL DATA
High Power LED, SMD
AlGaAs
SMB1W-850D are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with epoxy resin. On forward bias, it emits a radiation of typical 600 mW at a
peak wavelength of 850 nm.
Specifications
• Structure: AlGaAs, 1W high power chip
• Peak Wavelength: typ. 850 nm
• Optical Output Power: typ. 600 mW
• Package
SMD, PPA resin
Lead frame die: silver plated on copper
Lens: epoxy resin
Absolute Maximum Ratings (Ta=25°C)
Item
Symbol
Value
Unit
Power Dissipation
PD
3480
mW
Forward Current
IF
1200
mA
Pulse Forward Current *
1
IFP
3000
mA
Reverse Voltage
VR
10
V
Thermal Resistance
Rth
6
K/W
Operating Temperature
Topr
-30 … +85
°C
Storage Temperature
Tstg
-30 … +100
°C
Soldering Temperature *
2
Tsol
255
°C
*
1 duty = 1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward Voltage
VF
IF = 1.2 A
-
2.2
2.9
V
Pulsed Forward Current
VFP
IFP = 3 A
-
3.5
4.7
V
Reverse Current
IR
VR =10 V
-
-
10
µA
Total Radiated Power
PO
IF = 1.2 A
450
600
-
mW
Radiant Intensity
IE
IF = 1.2 A
-
370
-
mW/sr
Peak Wavelength
λ
P
IF = 100 mA
-
870
-
nm
Half Width
Δλ
IF = 100 mA
-
45
-
nm
Viewing Half Angle
Θ
1/2
IF = 100 mA
-
±66
-
deg.
Rise Time
tr
IF = 100 mA
-
15
-
ns
Fall Time
tf
IF = 100 mA
-
10
-
ns
Total Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
Notes: Do not view directly into the emitting area of the LED during operation!
The above specifications are for reference purpose only and subjected to change without prior notice.


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