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SMB1W-850D Datenblatt(PDF) 1 Page - Roithner LaserTechnik GmbH |
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SMB1W-850D Datenblatt(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 2 page 13.05.2011 SMB1W-850D 1 of 2 SMB1W-850D TECHNICAL DATA High Power LED, SMD AlGaAs SMB1W-850D are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 600 mW at a peak wavelength of 850 nm. Specifications • Structure: AlGaAs, 1W high power chip • Peak Wavelength: typ. 850 nm • Optical Output Power: typ. 600 mW • Package SMD, PPA resin Lead frame die: silver plated on copper Lens: epoxy resin Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Power Dissipation PD 3480 mW Forward Current IF 1200 mA Pulse Forward Current * 1 IFP 3000 mA Reverse Voltage VR 10 V Thermal Resistance Rth 6 K/W Operating Temperature Topr -30 … +85 °C Storage Temperature Tstg -30 … +100 °C Soldering Temperature * 2 Tsol 255 °C * 1 duty = 1%, pulse width = 10 µs * 2 must be completed within 5 seconds (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 1.2 A - 2.2 2.9 V Pulsed Forward Current VFP IFP = 3 A - 3.5 4.7 V Reverse Current IR VR =10 V - - 10 µA Total Radiated Power PO IF = 1.2 A 450 600 - mW Radiant Intensity IE IF = 1.2 A - 370 - mW/sr Peak Wavelength λ P IF = 100 mA - 870 - nm Half Width Δλ IF = 100 mA - 45 - nm Viewing Half Angle Θ 1/2 IF = 100 mA - ±66 - deg. Rise Time tr IF = 100 mA - 15 - ns Fall Time tf IF = 100 mA - 10 - ns Total Radiated Power is measured by S3584-08 Radiant Intensity is measured by Tektronix J-6512 Notes: Do not view directly into the emitting area of the LED during operation! The above specifications are for reference purpose only and subjected to change without prior notice. |
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