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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF1607PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF1607PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 142 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A IDM Pulsed Drain Current 570 PD @TC = 25°C Power Dissipation 380 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 1250 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Absolute Maximum Ratings VDSS = 75V RDS(on) = 0.0075Ω ID = 142A Description 09/22/10 www.irf.com 1 l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Benefits TO-220AB IRF1607PbF Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.40 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance Typical Applications l Industrial Motor Drive PD -95487A |
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Ähnliche Beschreibung - IRF1607PBF |
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