KTA2014E datasheet(1/3 Pages) KEC

Teilenummer	KTA2014E

Bauteilbeschribung	EPITAXIAL PLANAR PNP TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2014. 3. 31

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SEMICONDUCTOR

TECHNICAL DATA

KTA2014E

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Excellent h

FE Linearity

: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).

・Low Noise : NF=1dB(Typ.), 10dB(Max.).

・Complementary to KTC4075E.

・Small Package.

MAXIMUM RATING (Ta=25

℃)

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-150

mA

Base Current

IB

-30

mA

Collector Power Dissipation

PC

100

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

μA

DC Current Gain

hFE (Note)

VCE=-6V, IC=-2mA

70

-

400

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-100mA, IB=-10mA

-

-0.1

-0.3

V

Transition Frequency

fT

VCE=-10V, IC=-1mA

80

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

4

7

pF

Noise Figure

NF

VCE=-6V, IC=-0.1mA

f=1kHz, Rg=10k

Ω

-

1.0

10

dB

Note : hFE Classification O(2):70～140, Y(4):120～240, GR(6):200～400

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