KTD882_15 datasheet(2/3 Pages) KEC

Teilenummer	KTD882

Bauteilbeschribung	EPITAXIAL PLANAR NPN TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

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2003. 6. 16

2/3

KTD882

Revision No : 4

0

CE

16

12

820

4

COLLECTOR-EMITTER VOLTAGE V

(V)

0

CE

I

- V

C

COLLECTOR CURRENT I

(mA)

C

FE

h

- I C

COLLECTOR CURRENT I

(mA)

C

CE(sat)

V

,V

- I C

0.4

0.8

1.2

1.6

2.0

1

5

10

30

50

100

300

0.01

1K

3

500

10

3

C

0.3

0.1

1

COLLECTOR CURRENT I

(A)

C

f

- I

T

I =1mA

B

I =2mA

B

I =3mA

B

I =4mA

B

I =5mA

B

I =6mA

B

I =7mA

I =8mA

B

I =9mA

B

I =10mA

B

1

5

10

50

30

100

300

500

1K

3 5 10

30 50 100

300

1K

3K

V

=2V

CE

1K

10

13

100

500

300

1K

5

30

50

100

30

300

3K

BE(sat)

I /I =10

C B

V

(sat)

CE

V

(sat)

BE

0.03

V

=5V

CE

1

13

10

5

100

50

30

COLLECTOR-BASE VOLTAGE V

(V)

10

30

100

300

I =0

3K

1K

CB

E

1K

300

500

C

- V

ob

CB

f=1MHz

5K

3

1

10

3

5

1

COLLECTOR-EMITTER VOLTAGE V

(V)

310

30

CE

SAFE OPERATING AREA

1

0.5

0.3

0.1

0.05

0.03

0.01

10

100

300

1K

SINGLE NONREPETITIVE

PULSE Tc=25 C

CURVES MUST BE DERATED

LINEARLY WITH INCREASE

IN TEMPERATURE

I MAX.

(PULSED)

C

I MAX.

(CONTINUOUS)

C

DC

OPERATION

10mS

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