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MJW21193G Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MJW21193G
Bauteilbeschribung  Silicon Power Transistors
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© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 5
1
Publication Order Number:
MJW21193/D
MJW21193 (PNP)
MJW21194 (NPN)
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
IC
16
Adc
Collector Current − Peak (Note 1)
ICM
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RθJC
0.7
°C/W
Thermal Resistance,
Junction−to−Ambient
RθJA
40
°C/W
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
Device
Package
Shipping
ORDERING INFORMATION
MARKING DIAGRAM
x
= 3 or 4
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
MJW21193G
TO−247
(Pb−Free)
30 Units/Rail
MJW21194G
TO−247
(Pb−Free)
30 Units/Rail
http://onsemi.com
TO−247
CASE 340L
STYLE 3
1 2 3
MJW2119x
AYWWG
1
BASE
2 COLLECTOR
3
EMITTER
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN


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