Datenblatt-Suchmaschine für elektronische Bauteile |
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KDV350E Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KDV350E Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2014. 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDV350E Revision No : 1 VCO. FEATURES ・Low Series Resistance : r S=0.50Ω(Max.) ・Small Package. (ESC Package) MAXIMUM RATING (Ta=25 ℃) 1. ANODE 2. CATHODE ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 D C 1 2 E F 0.13 0.05 F G + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ ELECTRICAL CHARACTERISTICS (Ta=25 ℃) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type Name Marking K U CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1μ A 15 - - V Reverse Current IR VR=15V - - 10 nA Capacitance C1V VR=1V, f=1MHz 15.0 - 17.5 pF C4V VR=4V, f=1MHz 5.3 - 6.3 Capacitance Ratio K C1V/C4V, f=1MHz 2.8 - - Series Resistance rS VR=1V, f=470MHz - - 0.5 Ω |
Ähnliche Teilenummer - KDV350E_15 |
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Ähnliche Beschreibung - KDV350E_15 |
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