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74AHC_AHCT1G07 Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer 74AHC_AHCT1G07
Bauteilbeschribung  Buffer with open-drain output
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74AHC_AHCT1G07 Datenblatt(HTML) 5 Page - NXP Semiconductors

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74AHC_AHCT1G07
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 18 November 2014
5 of 12
NXP Semiconductors
74AHC1G07; 74AHCT1G07
Buffer with open-drain output
11. Dynamic characteristics
[1]
Typical values are measured at VCC = 3.3 V.
[2]
Typical values are measured at VCC = 5.0 V.
[3]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD  VCC2  fi +  (CL  VCC2  fo)where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf = 3.0 ns. For test circuit see Figure 6.
Symbol
Parameter
Conditions
25
C
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G07
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
[1]
CL = 15 pF
-
3.5
5.6
1.0
6.3
1.0
7.0
ns
CL = 50 pF
-
5.0
8.0
1.0
9.0
1.0
10.0
ns
VCC = 4.5 V to 5.5 V
[2]
CL = 15 pF
-
2.5
3.9
1.0
4.6
1.0
4.9
ns
CL = 50 pF
-
3.6
5.5
1.0
6.5
1.0
7.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
[1]
CL = 15 pF
-
5.8
7.9
1.0
8.4
1.0
8.9
ns
CL = 50 pF
-
8.3
11.5
1.0
12.0
1.0
12.5
ns
VCC = 4.5 V to 5.5 V
[2]
CL = 15 pF
-
4.2
5.1
1.0
5.6
1.0
6.1
ns
CL = 50 pF
-
6.0
7.5
1.0
8.0
1.0
8.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL =50pF;f= 1 MHz;
VI =GND to VCC
[3]
-5-
-
-
-
-
pF
For type 74AHCT1G07
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
[2]
CL = 15 pF
-
2.8
4.6
1.0
5.3
1.0
5.6
ns
CL = 50 pF
-
4.0
6.5
1.0
7.5
1.0
8.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
[2]
CL = 15 pF
-
3.9
5.6
1.0
6.1
1.0
6.6
ns
CL = 50 pF
-
5.5
8.0
1.0
8.5
1.0
9.0
ns
CPD
power
dissipation
capacitance
per buffer;
CL =50pF;f= 1 MHz;
VI =GND to VCC
[3]
-6.5
-
-
-
-
-
pF


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