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MTB010N06I3 Datenblatt(PDF) 4 Page - Cystech Electonics Corp.

Teilenummer MTB010N06I3
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB010N06I3 Datenblatt(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 4/ 8
MTB010N06I3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
30
60
90
120
150
180
012
345
VDS, Drain-Source Voltage(V)
10V
9V
8V
7V
VGS=3.5V
VGS=4V
VGS=4.5V
VGS=5V
VGS=6V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
1
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=10V
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
20
30
40
50
60
70
024
68
10
Drain-Source On-State Resistance vs Junction Tempearture
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
VGS=10V, ID=30A
RDS(ON)@Tj=25°C : 9.8mΩ typ.
VGS=4.5V, ID=15A
RDS(ON)@Tj=25°C : 12.8mΩtyp.
VGS, Gate-Source Voltage(V)
ID=30A


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