TPA3116D2-Q1_15 datasheet(6/34 Pages) TI

Teilenummer	TPA3116D2-Q1

Bauteilbeschribung	TPA311xD2-Q1 100-W and 50-W Class-D Stereo Automotive Amplifiers

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Hersteller	TI [Texas Instruments]

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TPA3116D2-Q1, TPA3118D2-Q1

SLOS862A – JULY 2015 – REVISED AUGUST 2015

www.ti.com

6.4 Thermal Information

TPA3116D2-Q1

TPA3118D2-Q1

THERMAL METRIC(1)

DAD

DAP

UNIT

32 PINS

RθJA

Junction-to-ambient thermal resistance

44.7(2)

32.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

1.2

17.2

°C/W

RθJB

Junction-to-board thermal resistance

21.5

17.3

°C/W

ψJT

Junction-to-top characterization parameter

1.2

0.4

°C/W

ψJB

Junction-to-board characterization parameter

21

17.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Modeled with a 15-mm × 15-mm × 2-mm copper heat slug heat sink. A better heat sink or airflow would yield a much better RθJA.

Perfect heat sink results could be as low as RθJC(top) = 1.2 ºC/W.

6.5 DC Electrical Characteristics

TA = 25°C, AVCC = PVCC = 12 V to 24 V, RL = 4 Ω (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Class-D output offset voltage (measured

| VOS |

VI = 0 V, gain = 36 dB

1.5

15

mV

differentially)

SD = 2 V, no load or filter, V(PVCC) = 12 V

20

35

ICC

Quiescent supply current

mA

SD = 2 V, no load or filter, V(PVCC) = 24 V

32

50

SD = 0.8 V, no load or filter, V(PVCC) = 12 V

<50

Quiescent supply current in shutdown

ICC(SD)

µA

mode

SD = 0.8 V, no load or filter, V(PVCC) = 24 V

50

400

Drain-source on-state resistance,

rDS(on)

V(PVCC) = 21 V, IO = 500 mA, TJ = 25°C

120

m

Ω

measured pin-to-pin

R1 = open, R2 = 20 k

Ω

19

20

21

dB

R1 = 100 k

Ω, R2 = 20 kΩ

25

26

27

G

Gain (BTL)

R1 = 100 k

Ω, R2 = 39 kΩ

31

32

33

dB

R1 = 75 k

Ω, R2 = 47 kΩ

35

36

37

R1 = 51 k

Ω, R2 = 51 kΩ

19

20

21

dB

R1 = 47 k

Ω, R2 = 75 kΩ

25

26

27

G

Gain (SLV)

R1 = 39 k

Ω, R2 = 100 kΩ

31

32

33

dB

R1 = 16 k

Ω, R2 = 100 kΩ

35

36

37

ton

Turn-on time

V(SD) = 2 V

10

ms

toff

Turn-off time

V(SD) = 0.8 V

2

µs

GVDD

Gate drive supply

I(GVDD) < 200 µA

6.4

6.9

7.4

V

Output voltage maximum under PLIMIT

VO

V(PLIMIT) = 2 V; VI = 1 Vrms

6.75

7.9

8.75

V

control

6

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