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BF1109 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Teilenummer BF1109
Bauteilbeschribung  N-channel dual-gate MOS-FETs
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Hersteller  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF1109 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1997 Dec 08
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
FEATURES
• Short channel transistor with high
forward transfer admittance to input
capacitance ratio
• Low noise gain controlled amplifier
up to 1 GHz
• Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
• VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
source
2
drain
3
gate 2
4
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1109 marking code: NFp.
Top view
MSB014
12
3
4
Fig.2
Simplified outline
(SOT143R).
BF1109R marking code: NBp.
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.3
Simplified outline
(SOT343R).
BF1109WR marking code: NB.
fpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−−
11
V
ID
drain current (DC)
−−
30
mA
Ptot
total power dissipation
Tamb ≤ 80 °C
−−
200
mW
yfs
forward transfer admittance
30
mS
Cig1-ss
input capacitance at gate 1
2.2
2.7
pF
Crss
reverse transfer capacitance
f = 1 MHz
25
40
fF
F
noise figure
f = 800 MHz
1.5
2.5
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100
−−
dB
µV
Tj
operating junction temperature
−−
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.


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