Datenblatt-Suchmaschine für elektronische Bauteile |
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1N1206AR Datenblatt(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N1206AR Datenblatt(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 600 V IF = 12 A Features • High Surge Capability DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N1199A(R) 1N1200A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage VRRM 50 100 400 600 V RMS reverse voltage VRMS 35 70 280 420 V 2. Reverse polarity (R): Stud is anode. Conditions 1N1199A thru 1N1206AR 200 140 1N1202A(R) Maximum ratings, at Tj = 25 °C, unless otherwise specified Silicon Standard Recovery Diode • Types from 50 V to 600 V VRRM DC blocking voltage VDC 50 100 400 600 V Continuous forward current IF 12 12 12 12 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol 1N1199A(R) 1N1200A(R) 1N1204A(R) 1N1206A(R) Unit Diode forward voltage 1.1 1.1 1.1 1.1 10 10 10 10 μA 15 15 15 15 mA Thermal characteristics Thermal resistance, junction - case RthJC 2.00 2.00 2.00 2.00 °C/W V 15 1N1202A(R) 2.00 VR = 50 V, Tj = 175 °C 1.1 VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 150 °C Conditions 240 240 -55 to 150 12 Electrical characteristics, at Tj = 25 °C, unless otherwise specified 10 200 A Reverse current IR VF 240 240 240 -55 to 150 TC = 25 °C, tp = 8.3 ms Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
Ähnliche Teilenummer - 1N1206AR |
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Ähnliche Beschreibung - 1N1206AR |
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