Datenblatt-Suchmaschine für elektronische Bauteile |
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SL1001 Datenblatt(PDF) 1 Page - IK Semicon Co., Ltd |
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SL1001 Datenblatt(HTML) 1 Page - IK Semicon Co., Ltd |
1 / 5 page TECHNICAL DATA 2011, February, Rev. 01 Audio Frequency Power Amplifier Features ● Low Speed Switching PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP *Collector Current (Pulse) - 7 A IB Base Current (DC) - 0.6 A PC Collector Dissipation (TC=25°C) 10 W Rθja Junction to Ambient 132 °C/W Rθjc Junction to Case 13.5 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW ≤10ms, Duty Cycle≤50% * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Electrical Characteristics Tc=25°C unless otherwise noted Characteristics Symbol Unit Measurement Mode Min Max DC Current Gain (1), (2) hFE Vce =2V, Ic =20mA 30 DC Current Gain (1), (2) hFE Vce = 2V, Ic = 1A 60 400 Collector Cut-off Current Icbo μA Vcb = 30V, Ie = 0 1.0 Collector Cut-off Current Icbo μA Vcb = 40V, Ie = 0 100 Emitter Cut-off Current Iebo μA Veb = 3V, Ic = 0 1.0 Emitter Cut-off Current Iebo μA Veb = 5V, Ic = 0 100 Collector-Emitter Saturation Voltage (1) Vce (sat) Ic = 2 A, Ib = 0.2 A 0.5 Ic = 0.8 A, Ib = 0.02 A 0.1 Base-Emitter Saturation Voltage (1) Vbe (sat) Ic = 2 A, Ib = 0.2 A 2.0 (1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2% (2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic SL1001 SOT-223 SL1001 Emitter 1 2 3 Collector Base |
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Ähnliche Beschreibung - SL1001 |
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