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SL1001 Datenblatt(PDF) 1 Page - IK Semicon Co., Ltd

Teilenummer SL1001
Bauteilbeschribung  Low Speed Switching
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Hersteller  IKSEMICON [IK Semicon Co., Ltd]
Direct Link  http://www.iksemi.com/en/index.html
Logo IKSEMICON - IK Semicon Co., Ltd

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TECHNICAL DATA
2011, February, Rev. 01
Audio Frequency Power Amplifier
Features
Low Speed Switching
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Tc=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 40
V
VCEO
Collector-Emitter Voltage
- 30
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 3
A
ICP
*Collector Current (Pulse)
- 7
A
IB
Base Current (DC)
- 0.6
A
PC
Collector Dissipation
(TC=25°C)
10
W
Rθja
Junction to Ambient
132
°C/W
Rθjc
Junction to Case
13.5
°C/W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW
≤10ms, Duty Cycle≤50%
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Electrical Characteristics Tc=25°C unless otherwise noted
Characteristics
Symbol
Unit
Measurement Mode
Min
Max
DC Current Gain (1), (2)
hFE
Vce =2V, Ic =20mA
30
DC Current Gain (1), (2)
hFE
Vce = 2V, Ic = 1A
60
400
Collector Cut-off Current
Icbo
μA
Vcb = 30V, Ie = 0
1.0
Collector Cut-off Current
Icbo
μA
Vcb = 40V, Ie = 0
100
Emitter Cut-off Current
Iebo
μA
Veb = 3V, Ic = 0
1.0
Emitter Cut-off Current
Iebo
μA
Veb = 5V, Ic = 0
100
Collector-Emitter
Saturation Voltage (1)
Vce (sat)
Ic = 2 A, Ib = 0.2 A
0.5
Ic = 0.8 A, Ib = 0.02 A
0.1
Base-Emitter
Saturation Voltage (1)
Vbe (sat)
Ic = 2 A, Ib = 0.2 A
2.0
(1) Pulse Test : Pulse Width
≤ 300㎲. Duty Cycle ≤ 2%
(2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic
SL1001
SOT-223
SL1001
Emitter
1
2
3
Collector Base


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