TC1307 datasheet(3/28 Pages) MICROCHIP

Teilenummer	TC1307

Bauteilbeschribung	Four-Channel CMOS LDO with Select Mode, Shutdown and Independent Reset

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Hersteller	MICROCHIP [Microchip Technology]

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 2002 Microchip Technology Inc.

DS21702A-page 3

TC1307

VOUT Temperature Coefficient

LDO1/LDO2/LDO3/LDO4

TCVOUT

—20

40

—ppm/°C Note 3

Line Regulation LDO1/LDO2/

LDO3/LDO4

∆VOUT/(VOUTx∆VIN)

—

0.05

0.2

%/V

(VR+1) ≤ VIN ≤ 6.0V

Load Regulation

LDO1/LDO2/LDO3/LDO4

∆VOUT/VOUT

——

2.0

%IL = 0.1 mA to IOUT_MAX

Note 4

Thermal Regulation

LDO1/LDO2/LDO3/LDO4

∆VOUT/∆PD

—0.04

—

V/W

Note 5

Dropout Voltage

LDO1/LDO2/LDO3/LDO4

VIN-VOUT

—2

—

mV

IL = 100 µA, Note 6

—15

—

IL = 20 mA, Note 6

—35

90

IL = 50 mA, Note 6

—100

280

IL = 150 mA, Note 6

Output Noise

LDO1/LDO2/LDO3/LDO4

eN

—1.2

—

µV/(Hz)½ IOUT = 100 mA, f = 10 kHz

C

OUT = 1 µF to noise

Over Temperature Protection Characteristics:

Thermal Shutdown Protection

TSD

—

150

—

°C

Note 7

Thermal Shutdown Hysteresis

∆TSD

—

10

—

°C

SHDN Input Characteristics:

SHDN Input High Threshold

VIH

60

——

% of VIN VIN = 2.7V to 6.0V

SHDN Input Low Threshold

VIL

——

15

% of VIN VIN = 2.7V to 6.0V

Wake-up Time

(from SHDN mode)

tWK

—10

—

µsec

VIN = 5V, IL = 100 mA,

COUT = 1 µF, CIN = 1 µF,

see Figure 4-1

Settling Time

(from SHDN mode)

tS

—40

—

µsec

VIN = 5V, IL = 100 mA,

COUT = 1 µF, CIN = 1 µF,

See Figure 4-1

Shutdown Leakage Current

ISHDN

—

±0.01

—

nA

VSHDN = VIN or GND

SELECT Input Characteristics:

SELECT Input High Threshold

VSELH

VIN-0.2

——

V

VIN = 2.7V to 6.0V

SELECT Input Low Threshold

VSELL

——

0.2

VVIN = 2.7V to 6.0V

SELECT Input Leakage

Current

ISELECT

—

±0.11

±0.06

—

µA

VSELECT = VIN

VSELECT = GND

RESET Output Characteristics:

Detect Operating

Voltage Range

VDET

1.0

1.2

—

6.0

VTA = 0°C to +70°C

TA = -40°C to +125°C

Unless otherwise specified, all limits are established for VIN = VR+1, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = 25°C.

Boldface type specifications apply for junction temperatures, TJ (Note 9) of -40°C to +125°C.

Parameter

Sym

Min

Typ

Max

Units

Conditions

Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + VDROPOUT.

2: VR is the nominal regulator output voltage. For example: VR = 1.8V, 2.5V, 2.8V or 3.0V.

3: TCVOUT = (VOUT-HIGH - VOUT-LOW) * 10

6 / (VR * ∆Temperature), VOUT-HIGH = Highest voltage measured over the tempera-

ture range. VOUT-LOW = Lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is

tested over a load range from 1mA to the maximum specified output current. Changes in output voltage due to heating

effects are determined using thermal regulation specification TCVOUT.

5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied.

Specifications are for a current pulse equal to ILMAX at VIN = 6.0V for t = 10 msec.

6: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value

with a 1V differential applied.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-

ature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipa-

tion will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction

temperatures above 150°C can impact the device reliability.

8: VTH-MIN = 2.55V and VTH-MAX = 2.70V.

9: The Junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambi-

ent temperature is not significant.

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